Answer / khush

Hot Electron Effect is when a high electric field intensity
developed across the channel causes an avalanche of
electronic charge to break the insulation barrier. As a
result high speed electrons are directed towards the
(floating) gate. This is a charge injection mechanism and is
used in NOR flash programming, better known as Channel Hot
Electron Programming. Flash cells which use this technique
damages the oxide layer with every write.

Answer / eric

This is caused because the device dimensions have been scaled down, but power supply and the operating voltages have not scaled accordingly. This causes the increase of electrical field strength and the velocity of electrons. Electrons trapped in oxide change the threshold voltage, typically increasing the threshold of NMOS, decreasing the threshold of PMOS. The hot-electron phenomenon can lead to a long-term reliability problem. To keep the hot-carrier effect under control, specailly engineered drain and source regions are used to keep the electrical fields in bound.

Answer / anantharaja

Hot electrons are non equilibrium electrons or holes in
semiconductors.

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