No Answer is Posted For this Question
Be the First to Post Answer
What happens when the gate oxide is very thin?
Differences between D-Latch and D flip-flop?
Cross section of an NMOS transistor?
Calculate rise delay of a 3-input NAND gate driving a 3-input NOR gate through a 6mm long and 0.45m wide metal wire with sheet resistance R = 0.065 / and Cpermicron= 0.25 fF/m. The resistance and capacitance of the unit NMOS are 6.5k and 2.5fF. Use a 3 segment -model for the wire. Consider PMOS and NMOS size of reference inverter as 2 and 1 respectively. Use appropriate sizing for the NAND and NOR gate.
What is the difference between cmos and bipolar technologies?
How to improve these parameters? (Cascode topology, use long channel transistors)
In what cases do you need to double clock a signal before presenting it to a synchronous state machine?
Differences between IRSIM and SPICE?
How many bit combinations are there in a byte?
What is component binding?
Explain various adders and diff between them?
How does Resistance of the metal lines vary with increasing thickness and increasing length?