Answer / poonam

a voltage drop across the transistor and current flowing
through it, there will be power dissipation in the form of
heat. The amount of heat produced is determined by the
power dissipation.

Answer / satyendra kumar

a voltage drop between collector and emiter terminal of
atransister with a collector current is cause in power
desipation in a transister and it is given by Vcc*Ic

Answer / abhijeet patharkar

In any electric device power dissipation takes place when
it is in conducting state.There r 3 regions in V-I
characteristics of a transister-
1]Active region
2]Saturation region
&
3]Cutoff region
Out of these trasister is in ON stae in 2 regions-
1]Active region
2]Saturation region.

So
transistor has power dissipation in these two mode.


please check it,n send reply wheather correct or not.
good bye....

Answer / p.thirumalainambi

power dissipation means dissipate power in form of heat.
power dissipation during the emitter base junction should
not be properly forward biased, and collector base junction
should not be reverse biased.

Answer / kevin fowke

The power loss in a transistor is simply the current
through the collecter multiplied by the voltage between
collector and emitter (or drain and source MOSFET). In
order to minimise this power dissapation reduce either the
current or the voltage across the device. THINK ABOUT IT.
Reduce the current by reducing the load or switching the
transistor OFF. Reduce the V-drop by ensuring that the
transistor is switched on fully. In the case of using the
linear region then heat dissapation is expected and should
be managed with a heatsink.

Answer / arjun

the transistor has APPLIED A ac signal emitter current
flowing from emitter to collector through the base region
the collector will have ac current signal of certain mamps
or micro amps and has a voltage drop developed across
collector load VC .
P=I*VC
THE PRODUCT OF COLLECTOR V/G WITH THE CURRENT(IC) WILL GIVE
THE POWER DISSSIPATED BY THE TRANSISTOR

Answer / sarath

the power dissipation occurs due to reverse saturation
current during collector junction is reverse biased..the
reverse saturation current increases with 5degree rise in
temp .. and reverse(other leakage currents) currents
increases with 10 degree rise in temp.. due to this overall
collector current increases which makes decrease in
collector to emitter voltage which cuases the transistor
driven into cut off..........this process is called thermal
runaway

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