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What is a "saltation velocity"?


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could anyone send me model question papers or outline of graduate trainee(chemical engg) post?

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According to Shockley equation, the I – V characteristic of a diode is approximated by I = IS [ exp (nVD / VT) – 1 ]. For silicon, let the reverse bias saturation current IS as 0.000000000001. If n is ideality factor with value of 1.5, VT as thermal voltage drop of 0.026 V at room temperature, what is the value of current I that passes through the silicon diode in the heater of evaporator when the forward voltage drop VD = 0.026 V? Please take note that exp is the exponential function with e(1) = 2.718, e(2) = 7.389.

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