Name the breakdown mechanism in a highly doped p-n junction under reverse biased condition.
Answer / Rajesh Kumar Yadav
The breakdown mechanism in a highly doped p-n junction under reverse biased conditions is Avalanche Breakdown. This occurs when the reverse bias voltage becomes high enough to accelerate the carriers (electrons and holes) to such an extent that they gain sufficient kinetic energy to break bonds with the lattice atoms, creating more electron-hole pairs and causing current to flow exponentially.
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