Answer / Aman Kumar Yadav

The cross-section of a P-channel Metal-Oxide-Semiconductor (PMOS) transistor typically includes the following layers from top to bottom: Gate Poly Silicon, SiO2 gate oxide, P-type channel region, P+ source region, P-type substrate, and N+ drain region. The PMOS transistor is fabricated by depositing and patterning a layer of polycrystalline silicon (poly) as the gate electrode, followed by thermal oxidation to form SiO2 gate oxide. A P-type implant forms the channel region, source, and drain regions.

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