Draw the Differential Sense Amplifier and explain its working. Any idea how to size this circuit? (Consider Channel Length Modulation)
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Implement F= not (AB+CD) using CMOS gates?
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Calculate rise delay of a 3-input NAND gate driving a 3-input NOR gate through a 6mm long and 0.45m wide metal wire with sheet resistance R = 0.065 / and Cpermicron= 0.25 fF/m. The resistance and capacitance of the unit NMOS are 6.5k and 2.5fF. Use a 3 segment -model for the wire. Consider PMOS and NMOS size of reference inverter as 2 and 1 respectively. Use appropriate sizing for the NAND and NOR gate.
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What does the above code synthesize to?
What are the limitations in increasing the power supply to reduce delay?
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