Calculate rise delay of a 3-input NAND gate driving a 3-input NOR gate through a 6mm long and 0.45m wide metal wire with sheet resistance R = 0.065 / and Cpermicron= 0.25 fF/m. The resistance and capacitance of the unit NMOS are 6.5k and 2.5fF. Use a 3 segment -model for the wire. Consider PMOS and NMOS size of reference inverter as 2 and 1 respectively. Use appropriate sizing for the NAND and NOR gate.
What is Noise Margin? Explain the procedure to determine Noise Margin?
What are the changes that are provided to meet design power targets?
Implement a function with both ratioed and domino logic and merits and demerits of each logic?
What is the ideal input and output resistance of a current source?
You have three adjacent parallel metal lines. Two out of phase signals pass through the outer two metal lines. Draw the waveforms in the centre metal line due to interference. Now, draw the signals if the signals in outer metal lines are in phase with each other
Cross section of a PMOS transistor?
What are the different design techniques required to create a layout for digital circuits?
For a NMOS transistor acting as a pass transistor, say the gate is connected to VDD, give the output for a square pulse input going from 0 to VDD
Are you familiar with the term snooping?
What work have you done on full chip Clock and Power distribution? What process technology and budgets were used?
What are the different classification of the timing control?
Explain sizing of the inverter?
If an/ap = 0.5, an/ap = 1, an/ap = 3, for 3 inverters draw the transfer characteristics?
Mention what are three regions of operation of mosfet and how are they used?