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VLSI Interview Questions
Questions Answers Views Company eMail

What is the difference between synchronous and asynchronous reset?

1094

What is the difference between nmos and pmos technologies?

1115

What is the function of enhancement mode transistor?

1118

What are the different design techniques required to create a layout for digital circuits?

1043

What is the purpose of having depletion mode device?

1056

What are the different measures that are required to achieve the design for better yield?

1218

What are the steps involved in designing an optimal pad ring?

1172

What is the difference between the mealy and moore state machine?

1121

What are the different classification of the timing control?

1116

What is the function of chain reordering?

1079

In vlsi chip 1000s of transistors are dropped, specifically categorized. Which method is used to achieve this & how it is done practically?

1021

What is look up table in vlsi?

986


Post New VLSI Questions

Un-Answered Questions { VLSI }

Process technology? What package was used and how did you model the package/system? What parasitic effects were considered?

3146


Explain Cross section of a PMOS transistor?

1234


For f = AB+CD if B is S-a-1, what are the test vectors needed to detect the fault?

1257


What does the above code synthesize to?

2607


What is the difference between nmos and pmos technologies?

1115


Process technology? What package was used and how did you model the package/system? What parasitic effects were considered?

2337


What is Body Effect?

2521


What work have you done on full chip Clock and Power distribution? What process technology and budgets were used?

3267


What's the price in 1K quantity?

2826


Explain Basic Stuff related to Perl?

1047


Why does the present vlsi circuits use mosfets instead of bjts?

1299


what is multiplexer?

1166


Explain why is the number of gate inputs to cmos gates usually limited to four?

1508


what are three regions of operation of MOSFET and how are they used?

1242


Calculate rise delay of a 3-input NAND gate driving a 3-input NOR gate through a 6mm long and 0.45m wide metal wire with sheet resistance R = 0.065 / and Cpermicron= 0.25 fF/m. The resistance and capacitance of the unit NMOS are 6.5k and 2.5fF. Use a 3 segment -model for the wire. Consider PMOS and NMOS size of reference inverter as 2 and 1 respectively. Use appropriate sizing for the NAND and NOR gate.

3869