Answer Posted / coolmoon
Latch up effect can be minimized by 1.putting the isolation
between pmos and nmos regions.
2. changing the dopping concentrations thus reducing the
gain of pnpn device.
SOI (silicon on insulator)doesnt have any latch up problem.
because of latch up effect there is the short between power
lines and the continuous current flows through the device
till the power down. This results into malfunctioning of
the device, resulting into its damage. This latch problem
is observed in case of two transistors arranged side by
side forming pnpn/npnp structure. (structure like SCR or
thyristor).
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