Interested to Buy Any Domain ? << Click Here >> for more details...
Answer Posted / arjun_r
When a P-type material and an N-type material are put together, The electrons from N side go to P side and holes from P side go to N side forming a depletion region at the junction. This junction develops a voltage which is dependent on the doping concentration. Now, the free electrons on N-Side require more energy to cross the depletion region. A +Ve voltage applied across the diode(Also called forward bias) can supply this energy.
When a -Ve voltage is applied, it will result in free carriers being pulled away from the depletion region thereby increasing its width. Hence, it will allow the current to pass only in one direction(i.e. when a +ve voltage is applied).
| Is This Answer Correct ? | 1 Yes | 0 No |
Post New Answer View All Answers
Are you familiar with the term snooping?
For CMOS logic, give the various techniques you know to minimize power consumption
Draw a transistor level two input NAND gate. Explain its sizing (a) considering Vth (b) for equal rise and fall times
What does the above code synthesize to?
Explain the operation of a 6T-SRAM cell?
Explain Cross section of an NMOS transistor?
Explain the working of 4-bit Up/down Counter?
Implement a function with both ratioed and domino logic and merits and demerits of each logic?
Draw the Cross Section of an Inverter? Clearly show all the connections between M1 and poly, M1 and diffusion layers etc?
What is Noise Margin? Explain the procedure to determine Noise Margin?
Draw the timing diagram for a SRAM Read. What happens if we delay the enabling of Clock signal?
Insights of a 4bit adder/Sub Circuit?
What is the function of tie-high and tie-low cells?
why is the number of gate inputs to CMOS gates usually limited to four?
what is a sequential circuit?
