Interested to Buy Any Domain ? << Click Here >> for more details...
Answer Posted / bob
FN Tunneling is only a second order effect, unless you are
desiging Flash memory. In which case, the FN tunneling is
the first order mechanism for programming and erasing the
memory cell.
| Is This Answer Correct ? | 4 Yes | 0 No |
Post New Answer View All Answers
Basic Stuff related to Perl?
Explain the Working of a 2-stage OPAMP?
How can you construct both PMOS and NMOS on a single substrate?
what is verilog?
What does the above code synthesize to?
Process technology? What package was used and how did you model the package/system? What parasitic effects were considered?
Cross section of a PMOS transistor?
Process technology? What package was used and how did you model the package/system? What parasitic effects were considered?
For a NMOS transistor acting as a pass transistor, say the gate is connected to VDD, give the output for a square pulse input going from 0 to VDD
Explain the Various steps in Synthesis?
How binary number can give a signal or convert into a digital signal?
Calculate rise delay of a 3-input NAND gate driving a 3-input NOR gate through a 6mm long and 0.45m wide metal wire with sheet resistance R = 0.065 / and Cpermicron= 0.25 fF/m. The resistance and capacitance of the unit NMOS are 6.5k and 2.5fF. Use a 3 segment -model for the wire. Consider PMOS and NMOS size of reference inverter as 2 and 1 respectively. Use appropriate sizing for the NAND and NOR gate.
What was your role in the silicon evaluation/product ramp? What tools did you use?
What are the different design constraints occur in the synthesis phase?
What does it mean “the channel is pinched off”?
