According to Shockley equation, the I – V characteristic of a diode is approximated by I = IS [ exp (nVD / VT) – 1 ]. For silicon, let the reverse bias saturation current IS as 0.000000000001. If n is ideality factor with value of 1.5, VT as thermal voltage drop of 0.026 V at room temperature, what is the value of current I that passes through the silicon diode in the heater of evaporator when the forward voltage drop VD = 0.026 V? Please take note that exp is the exponential function with e(1) = 2.718, e(2) = 7.389.
Answer Posted / kang chuen tat (malaysia - pen
Answer 20 : I = IS [ exp (nVD / VT) – 1 ] = 0.000000000001 [ exp (1.5 x 0.026 / 0.026) – 1 ] = 0.00000000000348 A. The answer is given by Kang Chuen Tat; PO Box 6263, Dandenong, Victoria VIC 3175, Australia; SMS +61405421706; chuentat@hotmail.com; http://kangchuentat.wordpress.com.
Is This Answer Correct ? | 0 Yes | 0 No |
Post New Answer View All Answers
What is quicklime and what are the uses?
how can I find out a sulfuric acid recovery plant disigner?
how does refractive index detector work?
Explain what types of metals are typically removed via chemical precipitation?
which accomplishments in your present position are you proud of and why?
What is the best way to configure a bypass line in slurry services?
What is the angle of repose?
Explain why is a vacuum breaker used on shell and tube heat exchangers that are utilizing steam as the heating utility?
Are there any general rules that should be considered when designing a slurry piping system?
What are some common causes of control valve noise?
What is the purpose of capacitor? What does capacitor load means? How does it connect?
Explain the working of a spray condenser?
What particle sizes are electrostatic precipitators used to remove?
What is an effective means of removing silicon from aluminum?
Jspl question paper for freshers requirements chemical engineering diploma