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Answer Posted / manjula
Crosstalk is coupling effect of capacitance it will give
more effect to critical signal
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Write a VLSI program that implements a toll booth controller?
What is the function of tie-high and tie-low cells?
Need to convert this VHDL code into VLSI verilog code? LIBRARY IEEE; USE IEEE.STD_LOGIC_1164.ALL; ----using all functions of specific package--- ENTITY tollbooth2 IS PORT (Clock,car_s,RE : IN STD_LOGIC; coin_s : IN STD_LOGIC_VECTOR(1 DOWNTO 0); r_light,g_light,alarm : OUT STD_LOGIC); END tollbooth2; ARCHITECTURE Behav OF tollbooth2 IS TYPE state_type IS (NO_CAR,GOTZERO,GOTFIV,GOTTEN,GOTFIF,GOTTWEN,CAR_PAID,CHEATE D); ------GOTZERO = PAID $0.00--------- ------GOTFIV = PAID $0.05---------- ------GOTTEN = PAID $0.10---------- ------GOTFIF = PAID $0.15---------- ------GOTTWEN = PAID $0.20--------- SIGNAL present_state,next_state : state_type; BEGIN -----Next state is identified using present state,car & coin sensors------ PROCESS(present_state,car_s,coin_s) BEGIN CASE present_state IS WHEN NO_CAR => IF (car_s = '1') THEN next_state <= GOTZERO; ELSE next_state <= NO_CAR; END IF; WHEN GOTZERO => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTZERO; ELSIF (coin_s = "01") THEN next_state <= GOTFIV; ELSIF (coin_s ="10") THEN next_state <= GOTTEN; END IF; WHEN GOTFIV=> IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTFIV; ELSIF (coin_s = "01") THEN next_state <= GOTTEN; ELSIF (coin_s <= "10") THEN next_state <= GOTFIV; END IF; WHEN GOTTEN => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s ="00") THEN next_state <= GOTTEN; ELSIF (coin_s="01") THEN next_state <= GOTFIV; ELSIF (coin_s="10") THEN next_state <= GOTTWEN; END IF; WHEN GOTFIF => IF (car_s ='0') THEN next_state <= CHEATED; ELSIF (coin_s = "00") THEN next_state <= GOTFIF; ELSIF (coin_s ="01") THEN next_state <= GOTTWEN; ELSIF (coin_s = "10") THEN next_state <= GOTTWEN; END IF; WHEN GOTTWEN => next_state <= CAR_PAID; WHEN CAR_PAID => IF (car_s = '0') THEN next_state <= NO_CAR; ELSE next_state<= CAR_PAID; END IF; WHEN CHEATED => IF (car_s = '1') THEN next_state <= GOTZERO; ELSE next_state <= CHEATED; END IF; END CASE; END PROCESS;-----End of Process 1 -------PROCESS 2 for STATE REGISTER CLOCKING-------- PROCESS(Clock,RE) BEGIN IF RE = '1' THEN present_state <= GOTZERO; ----When the clock changes from low to high,the state of the system ----stored in next_state becomes the present state----- ELSIF Clock'EVENT AND Clock ='1' THEN present_state <= next_state; END IF; END PROCESS;-----End of Process 2------- --------------------------------------------------------- -----Conditional signal assignment statements---------- r_light <= '0' WHEN present_state = CAR_PAID ELSE '1'; g_light <= '1' WHEN present_state = CAR_PAID ELSE '0'; alarm <= '1' WHEN present_state = CHEATED ELSE '0'; END Behav;
What are the different ways in which antenna violation can be prevented?
How can you model a SRAM at RTL Level?
Explain the operation of a 6T-SRAM cell?
Calculate rise delay of a 3-input NAND gate driving a 3-input NOR gate through a 6mm long and 0.45m wide metal wire with sheet resistance R = 0.065 / and Cpermicron= 0.25 fF/m. The resistance and capacitance of the unit NMOS are 6.5k and 2.5fF. Use a 3 segment -model for the wire. Consider PMOS and NMOS size of reference inverter as 2 and 1 respectively. Use appropriate sizing for the NAND and NOR gate.
Why do we gradually increase the size of inverters in buffer design? Why not give the output of a circuit to one large inverter?
In vlsi chip 1000s of transistors are dropped, specifically categorized. Which method is used to achieve this & how it is done practically?
In a SRAM layout, which metal layers would you prefer for Word Lines and Bit Lines? Why?
what is the difference between the TTL chips and CMOS chips?
What is Body Effect?
Give a big picture of the entire SRAM Layout showing your placements of SRAM Cells, Row Decoders, Column Decoders, Read Circuit, Write Circuit and Buffers
Draw a 6-T SRAM Cell and explain the Read and Write operations
How do you size NMOS and PMOS transistors to increase the threshold voltage?
