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What are the causes of failure of mosfet in an high
frequency application?
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Answer Posted / ganesh kamath
MOSFETS can withstand simultaneous application of high current and voltage without undergoing destructive. Power MOSFETs can also be paralleled easily because the forward voltage drop increases with increasing temperature, ensuring an even distribution of current among all components.
However, at high breakdown voltages (>200V) the on-state voltage drop of the power MOSFET becomes higher than that of a similar size bipolar device with similar voltage rating. This makes it more attractive to use the bipolar power transistor at the expense of worse high frequency performance.
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